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RF2145
2
Typical Applications
* 4.8V DCS1800/1900 Handsets * 3V DECT Handsets and Base Stations * Commercial and Consumer Systems * Portable Battery Powered Equipment
DCS1800/1900 POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in a 4-cell DCS1800 or DCS1900 handset. The device is packaged in a 16-lead plastic package with wide ground leads, and is self-contained with the exception of the output matching network and power supply feed line. Only a single positive voltage is required to operate with full power and efficiency, and on-board power control and power-down functions are provided.
.158 .150 1 .009 .004 .069 .064 .020 .014
.392 .386
.050
.244 .230 8MAX 0MIN
.059 .054
.035 .016
.010 .008
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOP-16 QBW1
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 4.8V Power Supply * +32dBm Output Power * 28dB Small Signal Gain * 55% Power Added Efficiency * Power Control * 1700MHz to 1900MHz Frequency Range
PC 1 GND 2 GND 3 VCC1 4 RF IN 5 GND 6 GND 7 NC 8
16 NC 15 GND 14 GND 13 RF OUT 12 RF OUT 11 GND 10 GND 9 NC
Ordering Information
RF2145 RF2145 PCBA DCS1800/1900 Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B5 010329
2-141
RF2145
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature
Rating
-0.5 to +7.5 -0.5 to +3.0 675 +12 5:1 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Input Power for Max Output Input Intermodulation Distortion
Specification Min. Typ. Max.
Unit
Condition
T=25 C, VCC =4.8V, VPC =2.5V, PIN =+8dBm, Freq=1750MHz
1710 to 1785 1850 to 1910 1700 to 1990 +32 55 +8 -57
MHz MHz dBm % dBm dBc
1/8 Duty cycle with 600s pulse width At maximum output power Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -42dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -32dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Any gain setting In "OFF" state, PIN =+8dBm
-48
dBc
Output Noise Power in Receive Band Isolation Second Harmonic Third Harmonic Input Impedance Input VSWR Output Load VSWR 3:1
-137 -25 -48 <-60 50 3.8:1
dBm/Hz dBm dBc dBc
Worst-case across the band. Using evaluation board; can be different with other layouts Spurious<-60dBc V V mA A dB ns V V mA A Threshold voltage Threshold voltage In "ON" state In "OFF" state
Power Control
Power Control "ON" Power Control "OFF" Current into PC Input Power Control Range Turn On/Off TIme 0.2 2.5 0.5 15 3.0
10 45 100 4.8 2.7 Power Supply Current 550 10 6.5
Power Supply
Power Supply Voltage Specifications Operating limits DC Current at maximum output power VPC =0.5V
2-142
Rev B5 010329
RF2145
Pin 1 Function PC Description
Power control pin. This also provides power down when VPC is less than +0.5V. Full power is achieved at 2.5V, and >45dB of gain control is obtainable over the full range. Approximately 15mA current is drawn into this pin at full power. Ground connection. This pin should be connected to the ground plane through a short path and may be combined with the ground plane from Pins 3, 6, 7, 10, 11, 14, and 15. All four of these wide leads are tied together internally to provide a low-inductance and low thermal resistance path to external ground. Ground vias should be placed as close as possible to each ground lead. Same as pin 2. Power supply pin for the first stage. Also provides tuning for interstage match.
VCC1
Interface Schematic
PC To RF Stages
2
GND
2
POWER AMPLIFIERS
3 4
GND VCC1
RF IN From Bias Stages
5 6 7 8 9 10 11 12
RF IN GND GND NC NC GND GND RF OUT
RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. Same as pin 2. Same as pin 2. No connection. No connection. Same as pin 2. Same as pin 2. RF output pin. Bias is also fed to the final stage through this wide lead. External matching is most easily achieved with a series transmission line and shunt capacitors, as shown in the application schematic.
See pin 4 schematic.
RF OUT
From Bias Stages
13 14 15 16
RF OUT GND GND NC
Same as pin 12. Same as pin 2. Same as pin 2. No connection.
Rev B5 010329
2-143
RF2145
Application Schematic DCS 1800
2
POWER AMPLIFIERS
470 pF PC 470 33 pF 22 nH VCC2 4 100 pF 270 33 pF RF IN 2.7 nH 7 8 10 9 33 pF 18 5 6 12 11 13 3 2 2.0 pF strip 3 15 14 3.3 pF 50 strip 33 pF 50 strip 50 strip 3.0 pF 33 pF RF OUT 1.1 pF VCC 1 16
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
C6 470 pF PC J1 R2 470 C2 1 F VCC2 4 C1 33 pF C8 33 pF L1 2.7 nH P1 NC 1 2 P1-3 3 GND VCC P2-3 NC P2 1 2 3 GND VCC2 2145400R1 18 R3 270 C7 100 pF 5 6 7 8 13 12 11 10 9 C26 3.0 pF C9 1.1 pF C10 1 nF C13 33 pF L2 22 nH R4 3 C5 2.0 pF 1 2 3 16 15 14 C12 33 pF C29 3.3 pF C23 10 F C25 1 nF C4 33 pF VCC
RF OUT J2
RF IN J1
2-144
Rev B5 010329
RF2145
Evaluation Board Layout 2" x 2"
2
POWER AMPLIFIERS
Rev B5 010329
2-145
RF2145
2
POWER AMPLIFIERS
2-146
Rev B5 010329

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